突破極限：半導體與二維材料分析新視野

Pushing Boundaries in Semiconductor and 2D Materials Analysis

HORIBA LabRAM Odyssey 共軛焦拉曼暨高解析光譜儀，具備先進材料研究所需的極致精度，光譜解析度可達 0.1 cm⁻¹，並具備低於 5 cm⁻¹ 的超低頻（ULF）截止能力。如此高性能表現，對於觀測半導體與二維材料中細微的拉曼位移至關重要，能有效揭示應變、缺陷與層間動態等關鍵訊息。

The HORIBA LabRAM Odyssey Confocal Raman & High-Resolution Spectrometer delivers the precision needed for advanced materials research, with spectral resolution down to 0.1 cm⁻¹, and Ultra Low Frequency (ULF) cutoff less than 5 cm⁻¹. This level of performance is critical for detecting the subtle Raman shifts that reveal strain, defects, and interlayer dynamics in semiconductors and 2D materials.

高光譜解析度：解析矽（Si）、碳化矽（SiC）、鑽石與氮化鎵（GaN）等半導體材料的結構細節

•製程中產生的殘留應力 • 外延成長中的應變鬆弛現象 • 缺陷與聲子侷限效應 • Residual stress from processing • Strain relaxation in epitaxy • Defects and phonon confinement

Application Note: False color 3D view (below surface) of fitted E2 peak positions of the (a) as-cut SiC sample (b) diamond-lapped SiC sample and (c) CMP polished SiC sample. Download the full application note.

超低頻偵測能力：揭示石墨烯與TMDs層間相互作用

• Shear/layer-breathing mode analysis • Detection of near-Rayleigh lattice vibrations • Identification of heterostructure strain and stacking

A combined Raman map of MoS2 layers.  Download the full application note.