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Riber is a world leading supplier of molecular beam epitaxy (MBE) products and services to the compound semiconductor community. |
Riber was founded as a French company in 1964 and started by supplying the materials science community with ultrahigh vacuum (UHV) materials and components imported from the United States. In 1976, Riber became a division of Instruments S.A., a scientific instrumentation company. Its experience with ultra-high vacuum processes enabled it to become a leader in the development of molecular beam epitaxy (MBE) research technology, and in 1978, Riber began offering to the semiconductor research institutes one of the first turnkey MBE systems with performance guarantees based on methodical in-house testing. Afterwards, during the eighties, Riber commercialized many successful innovations such as cracker effusion cells, gas-source MBE and multiwafer processing technology. Today, Riber is a world leading manufacturer and supplier of equipment and related components for the compound semiconductor industry. The company also provide our customers with a worldwide after-sales service network. Riber's 2000 sales demonstrate its global capability: Asia-Pacific sales (Japan, the People's Republic of China, Singapore, South Korea and Taiwan) comprised 40 percent, Europe 20 percent, and North America 40 percent of revenue. The Riber's product line is made up of two basic groups:  MBE
front-end equipment, which is further divided into research and production
machines. Components
for MBE machines, which include accessories and spare parts. |
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What is MBE? |
Molecular beam epitaxy is a critical enabling technology in the compound semiconductor industry because it is an essential first step allowing for the manufacture of many electronic and optoelectronic devices made of compound semiconductors. Epitaxy is a crystal growth process in which thin layers of compound semiconductor crystals are grown on the surface of a bulk crystal material called the substrate or wafer. If the chemical composition of these surface layers, also known as epitaxial layers or epitaxial films, is similar enough to the crystal structure of the substrate, the deposited layers of compound semiconductor materials will form a single crystal structure replicating that of the wafer material. Both the number and thickness of the epitaxial layers, as well as their chemical composition and incorporated dopants, determine the performance characteristics of the devices that are made from the resulting epitaxial wafer, or epiwafer. Compared to silicon-based electronic devices, compound semiconductor-based devices have several advantages, including the ability to operate at higher frequencies with lower power consumption while generating less electronic noise and distortion. Compound semiconductors have emerged as key components in a variety of high technology applications for wireless and satellite communications, fiber optic communications, computers, defense systems and automotive and consumer electronics.
MBE-grown materials are used for the research of compound semiconductors,
such as gallium arsenides, indium phosphides, nitrides, Silicon Germanium
(SiGe), Silicon Carbide (SiC), diamond and other advanced materials (oxides,
metals, ferroelectrics, superconductors, coatings, etc).
MBE-grown epitaxial wafers are used for the volume production
of commercial micro and opto-electronic devices, such as monolithic microwave
ICs (MESFETs , PHEMTs and HBTs), or pump lasers used in optical fiber networks. MBE is the preferred technology for many of the compound semiconductor devices used in the most advanced, high performance and fastest growing applications, such as cellular telephones, satellite communication handsets, equipment for high-speed fiber optic networks and consumer electronics applications such as set-top boxes for television Internet services and DVD players. |
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AST昇航股份有限公司
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擁有29年豐富經驗
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品管/檢驗/研究用精密科學儀器
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台灣總代理
台北市115南港區南港路三段50巷13號3樓 |
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TEL：02-27881778
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FAX：02-27864538
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聯絡信箱：ast@astcorp.com.tw
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